Description

This theme investigates the fundamental semiconductor physics, advanced materials technologies, electronic device architectures, computational modelling methods, experimental characterization techniques, and engineering optimization strategies associated with modern power electronics. It encompasses wide-bandgap and ultra-wide-bandgap semiconductor materials, including gallium nitride (GaN), gallium oxide (Ga₂O₃), silicon carbide (SiC), and related semiconductor heterostructures, together with high-electron-mobility transistors (HEMTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky barrier diodes, junction diodes, and advanced high-voltage switching devices.